1/9 advanced data june 2002 stgp7nb60kd STGB7NB60KD stgp7nb60kdfp n-channel 7a - 600v - to-220/to-220fp/d 2 pak powermesh? igbt n high input impedance (voltage driven) n low on-voltage drop (v cesat ) n low gate charge n high current capability n off losses include tail current n very high frequency operation n short circuit rated n co-packaged with turboswitch ? antiparallel diode description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has de- signed an advanced family of igbts, the power- mesh ? igbts, with outstanding performances. the suffix k identifies a family optimized for high frequency motor control applications with short cir- cuit withstand capability. applications n high frequency motor controls n smps and pfc in both hard switch and resonant topologies absolute maximum ratings ( n ) pulse width limited by safe operating area type v ces v ce(sat) i c stgp7nb60kd stgp7nb60kdfp STGB7NB60KD 600 v 600 v 600 v < 2.8 v < 2.8 v < 2.8 v 7 a 7 a 7 a symbol parameter value unit stgp7nb60kd STGB7NB60KD stgp7nb60kdfp v ces collector-emitter voltage (v gs = 0) 600 v v ecr emitter-collector voltage 20 v v ge gate-emitter voltage 20 v i c collector current (continuos) at t c = 25c 14 a i c collector current (continuos) at t c = 125c 7a i cm ( n ) collector current (pulsed) 56 a p tot total dissipation at t c = 25c 80 35 w derating factor 0.64 0.28 w/c v iso insulation withstand voltage a.c.(t = 1 sec; tc = 25c) -- 2500 v t stg storage temperature C65 to 150 c t j max. operating junction temperature 150 c to-220 1 2 3 1 2 3 to-220fp 1 3 d 2 pak internal schematic diagram
stgp7nb60kd/fp/STGB7NB60KD 2/9 thermal data electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic switching on to-220 d 2 pa k to-220fp rthj-case thermal resistance junction-case max 1.56 3.57 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w rthc-h thermal resistance case-heatsink typ 0.5 c/w symbol parameter test conditions min. typ. max. unit v br(ces) collector-emitter breakdown voltage i c = 250 a, v ge = 0 600 v i ces collector cut-off (v ge = 0) v ce = max rating, t c = 25 c 50 a v ce = max rating, t c = 125 c 500 a i ges gate-emitter leakage current (v ce = 0) v ge = 20v , v ce = 0 100 na symbol parameter test conditions min. typ. max. unit v ge(th) gate threshold voltage v ce = v ge , i c = 250a 57v v ce(sat) collector-emitter saturation voltage v ge = 15v, i c = 7 a 2.3 2.8 v v ge = 15v, i c = 7 a, tc =100c 1.9 v symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ce = 25 v , i c =7 a 5s c ies input capacitance v ce = 25v, f = 1 mhz, v ge = 0 560 pf c oes output capacitance 68 pf c res reverse transfer capacitance 15 pf q g total gate charge v ce = 480v, i c = 7 a, v ge = 15v 42 nc q ge gate-emitter charge 7.9 nc q gc gate-collector charge 17.6 nc tscw short circuit withstand time v ce = 0.5 v br(ces) , v ge = 15 v , tj = 125c , r g = 10 w 10 s symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v cc = 480 v, i c = 7 a r g =10 w , v ge = 15 v 15 ns t r rise time 48 ns (di/dt) on turn-on current slope v cc = 480 v, i c = 7 a r g =10 w v ge = 15 v,tj = 125c 160 a/s eon turn-on switching losses 70 j
3/9 stgp7nb60kd/fp/STGB7NB60KD electrical characteristics (continued) switching off collector-emitter diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by max. junction temperature. (**)losses include also the tail (jedec standardization) symbol parameter test conditions min. typ. max. unit t c cross-over time v cc = 480 v, i c = 7 a, r ge = 10 w , v ge = 15 v 85 ns t r (v off ) off voltage rise time 20 ns t d ( off ) delay time 75 ns t f fall time 70 ns e off (**) turn-off switching loss 85 m j e ts total switching loss 235 m j t c cross-over time v cc = 480 v, i c = 7 a, r ge = 10 w , v ge = 15 v tj = 125 c 150 ns t r (v off ) off voltage rise time 50 ns t d ( off ) delay time 110 ns t f fall time 110 ns e off (**) turn-off switching loss 220 m j e ts total switching loss 405 m j symbol parameter test conditions min. typ. max. unit i f i fm forward current forward current pulsed 6 48 a a v f forward on-voltage i f = 6 a i f = 6 a, tj = 125 c 1.8 1.4 2.2 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 6 a ,v r = 200 v, tj =125c, di/dt = 100a/ m s 100 135 2.7 ns nc a
stgp7nb60kd/fp/STGB7NB60KD 4/9 fig. 2: test circuit for inductive load switching fig. 1: gate charge test circuit
5/9 stgp7nb60kd/fp/STGB7NB60KD dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
stgp7nb60kd/fp/STGB7NB60KD 6/9 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
7/9 stgp7nb60kd/fp/STGB7NB60KD 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0 o8o d 2 pak mechanical data 3
stgp7nb60kd/fp/STGB7NB60KD 8/9 tape and reel shipment (suffix t4)* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
9/9 stgp7nb60kd/fp/STGB7NB60KD information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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